Semiconductor structure unit and forming method thereof

The invention discloses a semiconductor structure unit and a forming method thereof, and the structure comprises a substrate which comprises a first region and a second region which are arranged along a first direction; the plurality of gate structures are positioned on the substrate and are arrange...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WANG LIZHU, WANG JUN, CAI YANFEI, LEI CHUANZHEN, LIAO CHUNHE, WANG DUO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a semiconductor structure unit and a forming method thereof, and the structure comprises a substrate which comprises a first region and a second region which are arranged along a first direction; the plurality of gate structures are positioned on the substrate and are arranged in parallel along a second direction; the first metal structure is located on the first region gate structure and comprises a first metal layer and a second metal layer which are connected, the first metal layer is parallel to the second direction, and the second metal layer is parallel to the first direction; the second metal structure is located on the second region gate structure and comprises a third metal layer and a fourth metal layer which are connected, the third metal layer is parallel to the second direction, and the fourth metal layer is parallel to the first direction; the first metal layer and the third metal layer have a first size in the first direction, a first distance is formed between the secon