Space MOSFET accelerated degradation test evaluation method

The invention discloses a space MOSFET accelerated degradation test evaluation method, which comprises the following steps of collecting degradation data of a power device at different time under external stress of different levels; assuming that the service life T of the power device obeys normal d...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHANG HUAHUI, JIANG YUYU, WANG LEI, DING SHUAI, CHEN HAITAO, TIAN QIANCHENG, REN JIEWEI, HUANG JUN, YANG HUA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING PHYSICS
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