Space MOSFET accelerated degradation test evaluation method

The invention discloses a space MOSFET accelerated degradation test evaluation method, which comprises the following steps of collecting degradation data of a power device at different time under external stress of different levels; assuming that the service life T of the power device obeys normal distribution, and adopting a distribution parameter estimation method corresponding to the normal distribution to obtain estimated values of the power device at each moment under different stresses, including a mean value and a variance of the normal distribution; selecting a fitting function according to the variation trend of the estimated value along with time; selecting an acceleration model according to the stress type of the accelerated degradation experiment, and obtaining parameters of a fitting function by using a least square method according to the estimated value; setting a failure threshold, and identifying a data point by using an RANSAC algorithm: substituting the estimated value into the selected fit