Sputtering device
This sputtering device is provided with a cathode unit that discharges sputtering particles toward a substrate on which a film is to be formed, said substrate having a substrate surface. The cathode unit has a target, a magnet unit, and a magnet unit scanning section. The density of the magnetic for...
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creator | ISHIGURE FUMIAKI KITAZAWA RYOYA TAKAGI DAI |
description | This sputtering device is provided with a cathode unit that discharges sputtering particles toward a substrate on which a film is to be formed, said substrate having a substrate surface. The cathode unit has a target, a magnet unit, and a magnet unit scanning section. The density of the magnetic force generated at the end portion near the contour edge of the swing region and the density of the magnetic force generated at the central portion of the swing region are uniformized.
本发明的溅射装置具备朝向具有基板表面的被成膜基板排出溅射粒子的阴极单元。阴极单元具有靶、磁铁单元和磁铁单元扫描部。在位于摆动区域的轮廓边附近的端部产生的磁力密度和在所述摆动区域的中央部产生的磁力密度被均匀化。 |
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本发明的溅射装置具备朝向具有基板表面的被成膜基板排出溅射粒子的阴极单元。阴极单元具有靶、磁铁单元和磁铁单元扫描部。在位于摆动区域的轮廓边附近的端部产生的磁力密度和在所述摆动区域的中央部产生的磁力密度被均匀化。</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240510&DB=EPODOC&CC=CN&NR=118007077A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240510&DB=EPODOC&CC=CN&NR=118007077A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ISHIGURE FUMIAKI</creatorcontrib><creatorcontrib>KITAZAWA RYOYA</creatorcontrib><creatorcontrib>TAKAGI DAI</creatorcontrib><title>Sputtering device</title><description>This sputtering device is provided with a cathode unit that discharges sputtering particles toward a substrate on which a film is to be formed, said substrate having a substrate surface. The cathode unit has a target, a magnet unit, and a magnet unit scanning section. The density of the magnetic force generated at the end portion near the contour edge of the swing region and the density of the magnetic force generated at the central portion of the swing region are uniformized.
本发明的溅射装置具备朝向具有基板表面的被成膜基板排出溅射粒子的阴极单元。阴极单元具有靶、磁铁单元和磁铁单元扫描部。在位于摆动区域的轮廓边附近的端部产生的磁力密度和在所述摆动区域的中央部产生的磁力密度被均匀化。</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAMLigtKUktysxLV0hJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGFgYG5gbm5o7GxKgBAN-xH7s</recordid><startdate>20240510</startdate><enddate>20240510</enddate><creator>ISHIGURE FUMIAKI</creator><creator>KITAZAWA RYOYA</creator><creator>TAKAGI DAI</creator><scope>EVB</scope></search><sort><creationdate>20240510</creationdate><title>Sputtering device</title><author>ISHIGURE FUMIAKI ; KITAZAWA RYOYA ; TAKAGI DAI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118007077A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>ISHIGURE FUMIAKI</creatorcontrib><creatorcontrib>KITAZAWA RYOYA</creatorcontrib><creatorcontrib>TAKAGI DAI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ISHIGURE FUMIAKI</au><au>KITAZAWA RYOYA</au><au>TAKAGI DAI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Sputtering device</title><date>2024-05-10</date><risdate>2024</risdate><abstract>This sputtering device is provided with a cathode unit that discharges sputtering particles toward a substrate on which a film is to be formed, said substrate having a substrate surface. The cathode unit has a target, a magnet unit, and a magnet unit scanning section. The density of the magnetic force generated at the end portion near the contour edge of the swing region and the density of the magnetic force generated at the central portion of the swing region are uniformized.
本发明的溅射装置具备朝向具有基板表面的被成膜基板排出溅射粒子的阴极单元。阴极单元具有靶、磁铁单元和磁铁单元扫描部。在位于摆动区域的轮廓边附近的端部产生的磁力密度和在所述摆动区域的中央部产生的磁力密度被均匀化。</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | Sputtering device |
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