Preparation method of high-voltage-resistant insulating coating suitable for semiconductor compact structure

The invention belongs to the field of material preparation, and particularly relates to a preparation method of a high-voltage-resistant insulating coating suitable for a semiconductor compact structure, which comprises the following steps: pretreating a semiconductor substrate; the preparation method comprises the following steps: preparing ceramic powder from nanoscale raw materials to obtain a first raw material; granulating the first raw material, and carrying out plasma sintering on the granulated first raw material to obtain a second raw material; performing grain size distribution on the second raw material to obtain a third raw material; and on the pretreated semiconductor substrate, the high-voltage-resistant insulating coating suitable for the semiconductor compact structure is prepared from the third raw material through a plasma spraying process, the nanoscale raw materials are adopted, and the high-temperature service stability of the coating can be effectively improved. The bonding strength of t