Preparation method of semiconductor element

The invention provides a preparation method of a semiconductor element. The preparation method comprises the following steps: providing a substrate; forming a metallization layer on the substrate; forming a mask pattern on the metallization; forming a width control structure on a side surface of the mask pattern to define a gap to expose the metallization layer; removing the mask pattern; and patterning the metallization layer to form a word line. A width of the word line is substantially equal to a width of the gap. 本公开提供一种半导体元件的制备方法。该制备方法包括提供一基底；形成一金属化层在该基底上；形成一遮罩图案在该金属化上；形成一宽度控制结构在该遮罩图案的一侧表面上以界定一间隙以暴露该金属化层；移除该遮罩图案；以及图案化该金属化层以形成一字元线。该字元线的一宽度大致等于该间隙的一宽度。