Method of forming integrated circuit

Some implementations described herein include methods of forming integrated circuits. The method includes using a support fill mixture including combinations of various types of composite particles in lateral gap regions of the stack of semiconductor substrates and along peripheral regions of the stack of semiconductor substrates. One type of composite particles included in the combination may be relatively small in size and include a smooth surface, which may allow the composite particles to penetrate into the lateral interstitial regions. Characteristics of a support fill mixture comprising multiple types of combinations of composite particles may control thermally induced stresses during downstream fabrication to reduce the likelihood of defects occurring in the support fill mixture and/or a stack of semiconductor substrates. 本文描述的一些实施包括形成集成电路的方法。此方法包括使用支撑填充混合物，其包括在半导体衬底的堆叠的侧向间隙区中以及沿着半导体衬底的堆叠的周边区的各种类型的复合颗粒的组合。组合中包含的一种类型的复合颗粒可以是尺寸相对较小，并包含光滑的表面，可允许复合颗粒深入到侧向间隙区中。包含多种类型的复合颗粒组合的支撑填充混合物的特性可以控制下游制造期间的热诱导应力，以减少支撑填