Memory

The invention discloses a memory. The memory comprises (n-1) non-volatile units, (n-1) bit lines and a current driving circuit, each non-volatile unit of the (n-1) non-volatile units comprises a first end and a second end. The i-th bit line of the (n-1) bit lines is coupled to the first end of the i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	GUO YOUCE, YANG BOJUN, HUANG ZHENGTONG, CAI ZHIWEI, WU ZHENXIANG, CHEN JIANZHONG, YU XINCHI, WU YITING, ZENG JUNYAN, CHEN CHANGHONG, XIE YONGJING, WANG SHURU, QIU YALAN, LI BAICHANG, WANG RENYOU, HUANG JUNXIAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	The invention discloses a memory. The memory comprises (n-1) non-volatile units, (n-1) bit lines and a current driving circuit, each non-volatile unit of the (n-1) non-volatile units comprises a first end and a second end. The i-th bit line of the (n-1) bit lines is coupled to the first end of the i-th non-volatile unit of the (n-1) non-volatile units. The current driving circuit includes n transistors coupled to the (n-1) non-volatile cells. 本发明公开一种存储器，包含(n-1)个非挥发性单元，(n-1)条位线及电流驱动电路。该(n-1)个非挥发性单元的每个非挥发性单元包含第一端及第二端。该(n-1)条位线的第i位线耦接于该(n-1)个非挥发性单元的第i非挥发性单元的第一端。该电流驱动电路包含n个晶体管，耦接于该(n-1)个非挥发性单元。