High performance semiconductor device
A semiconductor device (10) includes a lead (30), a board (50), and a conductive layer (55) on the board (50). The lead (30) includes a longitudinal axis (32) and is soldered to the conductive layer (55). The semiconductor device (10) further includes a first solder dam edge (95a) and a second solde...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A semiconductor device (10) includes a lead (30), a board (50), and a conductive layer (55) on the board (50). The lead (30) includes a longitudinal axis (32) and is soldered to the conductive layer (55). The semiconductor device (10) further includes a first solder dam edge (95a) and a second solder dam edge (95b), each positioned on the lead (30), at a distance of no more than 10 mils from each other along the longitudinal axis (32).
一种半导体器件(10)包括引线(30)、板(50)和板(50)上的导电层(55)。引线(30)包括纵轴(32)并且被焊接到导电层(55)。半导体器件(10)进一步包括第一焊料坝边缘(95a)和第二焊料坝边缘(95b)，每个定位在引线(30)上，沿着纵轴(32)彼此相距不多于10密耳。 |
|---|