IGBT with dV/dt controllability

An IGBT (1) having a barrier region (105) is presented. A power base unit (1-1) of an IGBT (1) is equipped with at least two trenches (14, 15), both of which can extend into a barrier region (105). The barrier region (105) may be p-doped and vertically defined by the drift region (100) (i.e., in an...

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Bibliographische Detailangaben

Hauptverfasser:	JAEGER CHRISTIAN, JOHANNES GEORG LAVEN, PHILIPPE ANTOINE, VELLEI ANTONIO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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