IGBT with dV/dt controllability

An IGBT (1) having a barrier region (105) is presented. A power base unit (1-1) of an IGBT (1) is equipped with at least two trenches (14, 15), both of which can extend into a barrier region (105). The barrier region (105) may be p-doped and vertically defined by the drift region (100) (i.e., in an...

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Bibliographische Detailangaben
Hauptverfasser:	JAEGER CHRISTIAN, JOHANNES GEORG LAVEN, PHILIPPE ANTOINE, VELLEI ANTONIO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	An IGBT (1) having a barrier region (105) is presented. A power base unit (1-1) of an IGBT (1) is equipped with at least two trenches (14, 15), both of which can extend into a barrier region (105). The barrier region (105) may be p-doped and vertically defined by the drift region (100) (i.e., in an extension direction (Z) and a counter-extension direction (Z)). The barrier region (105) may be electrically floating. 呈现了具有势垒区(105)的IGBT(1)。IGBT(1)的功率基本单元(1-1)被装备有至少两个沟槽(14、15)，该至少两个沟槽(14、15)都可以延伸到势垒区(105)中。势垒区(105)可以是p掺杂的并且通过漂移区(100)被竖直限定(即在延伸方向(Z)和逆延伸方向(Z))。势垒区(105)可以是电浮置的。