SRAM structure with adjustable operation speed and manufacturing method thereof

The invention provides an SRAM (Static Random Access Memory) structure with an adjustable operation speed. The SRAM structure comprises four PMOS (P-channel Metal Oxide Semiconductor) transistors PG1, PG2, PU1 and PU2 and four NMOS (N-channel Metal Oxide Semiconductor) transistors PD1, PD2, RP PD an...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	CHEN PINHAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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