Synthesis of fluoroalkyltin precursors

Certain fluorinated alkyl tin compounds are provided, which may be considered to be useful for vapor deposition of tin-containing films onto substrate surfaces of microelectronic devices. The invention also provides methods of making the precursor compounds and methods of using these compounds to deposit tin-containing films onto microelectronic device substrates. 本发明提供某些氟化烷基锡化合物，可认为其可用于将含锡膜气相沉积到微电子装置衬底表面上。本发明还提供制备所述前体化合物的方法及使用这些化合物将含锡膜沉积到微电子装置衬底上的方法。