Gallium nitride-based semiconductor light-emitting element

The gallium nitride-based semiconductor light-emitting element comprises a substrate, an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer which are sequentially arranged from bottom to top, a three-dimensional hole injection layer is arranged between the quantum well layer and the p-type semiconductor layer, and the three-dimensional hole injection layer has the characteristics of elastic coefficient distribution and thermal expansion coefficient distribution. The three-dimensional hole injection layer is arranged between the quantum well layer and the p-type semiconductor layer, and the elastic coefficient distribution and the thermal expansion coefficient distribution of the three-dimensional hole injection layer are specifically designed, so that the Mg solubility and ionization efficiency can be improved, the overlapping probability of electron hole wave functions in the quantum well layer is improved, and the performance of the device is improved. Therefore, the electron