Schottky barrier diode

A Schottky barrier diode is provided with: an ohmic electrode layer 4; the lower surface of the second semiconductor layer 32 is in ohmic contact with the upper surface of the ohmic electrode layer 4, and the second semiconductor layer 32 is an n-type semiconductor layer and comprises SnO2 compound semiconductor materials; the first semiconductor layer 31 is an n-type semiconductor layer and comprises a SnO2 compound semiconductor material, the electron carrier concentration of the first semiconductor layer 31 is smaller than or equal to 5 * 1017/cm < 3 >, when the reverse withstand voltage set by the Schottky barrier diode is 10-10000 V, the thickness of the first semiconductor layer 31 is larger than or equal to 0.18 [mu] m and smaller than or equal to 112 [mu] m, and the electron carrier concentration of the first semiconductor layer 31 is lower than that of the second semiconductor layer 32; and the lower surface of the Schottky electrode layer 1 and the upper surface of the second semiconductor layer 31