Field effect transistor and manufacturing method thereof

The invention discloses a field effect transistor and a manufacturing method thereof, and the field effect transistor comprises the components of a substrate which is provided with a transistor forming region; the insulating layer is positioned on the substrate; the first graphene layer is positioned on the insulating layer in the transistor forming region; the etching stop layer is positioned on the first graphene layer in the transistor forming region; the first interlayer dielectric layer is located on the etching stop layer; a gate trench recessed in the first interlayer dielectric layer and the etch stop layer in the transistor formation region; the second graphene layer is located on the inner surface of the gate trench; the gate dielectric layer is located on the second graphene layer and the first interlayer dielectric layer; and the grid electrode is positioned on the grid electrode dielectric layer in the grid electrode groove. 本发明公开一种场效应晶体管及其制作方法，其中该场效应晶体管包含：衬底，其上具有晶体管形成区；绝缘层，位于所述衬底上；第一石墨烯层，位于所述晶体管