Planar grid power device and manufacturing method thereof
The invention provides a planar gate power device and a manufacturing method thereof, and the method comprises the steps: providing a substrate, and manufacturing an epitaxial layer on the upper side of the substrate; forming a JFET region on the epitaxial layer; growing a gate oxide layer on the up...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a planar gate power device and a manufacturing method thereof, and the method comprises the steps: providing a substrate, and manufacturing an epitaxial layer on the upper side of the substrate; forming a JFET region on the epitaxial layer; growing a gate oxide layer on the upper side of the epitaxial layer, and depositing polycrystalline silicon on the upper side of the gate oxide layer; injecting elements of a first conductive type into the polycrystalline silicon, carrying out trap pushing operation, and then forming a polycrystalline silicon grid electrode through an etching process; performing etching operation on the gate oxide layer and the epitaxial layer at the middle part and the lower side of the polycrystalline silicon gate to form a separation groove, and arranging the lower end of the separation groove in the JFET region; and depositing a dielectric layer in the separation groove and on the upper sides of the polycrystalline silicon gate and the exposed epitaxial layer. Ac |
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