Method for preparing layered MXenes material by etching with chloric acid
The invention belongs to the technical field of nano layered materials, and particularly relates to a method for preparing a layered MXenes material by etching with chloric acid, the chloric acid is adopted to realize etching of an MAX phase material, the chloric acid is an oxyacid and has strong ac...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention belongs to the technical field of nano layered materials, and particularly relates to a method for preparing a layered MXenes material by etching with chloric acid, the chloric acid is adopted to realize etching of an MAX phase material, the chloric acid is an oxyacid and has strong acidity, the influence of the use of a fluorine-containing etching agent on the performance of the material can be avoided, and the performance of the MXenes material is improved. Meanwhile, the method is low in equipment requirement, short in time consumption, high in preparation efficiency and simple in process, the obtained layered MXenes material is a large sheet, and the average side length of the sheet layer is 1.5-2.0 microns.
本发明属于纳米层状材料技术领域,具体为一种含氯酸刻蚀制备层状MXenes材料的方法,采用含氯酸实现MAX相材料的刻蚀,含氯酸为含氧酸且酸性较强,可以避免使用含氟刻蚀剂对材料自身性能的影响,同时本发明对设备要求低、耗时短、制备效率高、工艺简单,得到的层状MXenes材料呈较大薄片,片层的平均边长为1.5~2.0μm。 |
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