Silicon carbide wafer and silicon carbide semiconductor device using same

A silicon carbide (SiC) wafer is provided with a substrate comprising SiC and an epitaxial layer comprising SiC and disposed on the substrate. The concentration of the carbon vacancies continuously decreases from the substrate side toward the epitaxial layer, and the substrate is configured such tha...

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Bibliographische Detailangaben

1. Verfasser:	UEHIGASHI HIDEYUKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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