Silicon carbide wafer and silicon carbide semiconductor device using same

A silicon carbide (SiC) wafer is provided with a substrate comprising SiC and an epitaxial layer comprising SiC and disposed on the substrate. The concentration of the carbon vacancies continuously decreases from the substrate side toward the epitaxial layer, and the substrate is configured such that the concentration of the carbon vacancies is 3.0 * 1015 cm or more. 碳化硅(SiC)晶片具备由SiC构成的衬底和由SiC构成并配置在衬底上的外延层。从衬底侧朝向外延层，碳空位的浓度连续地减小，衬底构成为，碳空位的浓度为3.0×1015cm－3以上。