Semiconductor structure and manufacturing method thereof

The invention discloses a semiconductor structure and a manufacturing method thereof, the semiconductor structure comprises a substrate, an active region array defined in the substrate by shallow trench isolation, gate trenches arranged in the substrate and crossing the active region array, the gate trench at the outermost side in the second direction being an outer trench, and the rest being inner trenches. The first conductor layer is filled in a lower portion of the inner trench. A first cap layer fills an upper portion of the inner trench. The semiconductor layer is interposed between the first conductive layer and the first cap layer in direct contact with the first cap layer and the first conductive layer. And the second conductor layer is filled at the lower part of the outer side groove. A second cap layer fills an upper portion of the outer trench. The second cap layer continuously covers and contacts the second conductor layer along a cross-section of the outer trench. 本发明公开了一种半导体结构及其制作方法，半导体结构包括衬底，