Manufacturing method of semiconductor device, semiconductor device and electronic equipment

The invention provides a manufacturing method of a semiconductor device, the semiconductor device and electronic equipment, and relates to the technical field of semiconductor chips. The method comprises the following steps: providing a silicon wafer; forming a passivation groove on at least one surface of the silicon wafer; photoresist and glass powder are arranged in the passivation tank, the photoresist is located in the middle area of the passivation tank, and the photoresist and the glass powder do not cover each other; performing high-temperature treatment on the glass powder to form a glass covering layer, and ablating to remove the photoresist to form a scribing channel; forming functional structure film layers of at least two semiconductor devices on the first surface and the second surface of the silicon wafer, wherein the functional structure film layers are located on the two sides of the scribing channel; the functional structure film layer is not overlapped with the scribing channel; and scribin