Semiconductor bonding method based on atomic cluster flux

The invention discloses a semiconductor bonding method based on atomic cluster flux, and belongs to the technical field of integrated circuit preparation. The method comprises the following steps: generating a cluster beam through a magnetron sputtering method; the cluster beams are deposited on the surface of the substrate, and the clusters are evenly laid on the surface of the substrate to form a cluster layer; and heating and melting the cluster layer in a normal-pressure environment with the temperature lower than 1/3 of the melting point of a traditional flux material, and placing a wafer to be bonded on the cluster layer, so that the substrate and the upper wafer are bonded with each other. According to the semiconductor bonding technology based on the atomic cluster welding flux, the unsmooth morphology of the surface of the wafer can be self-adapted based on the mobility of the cluster, and bonding of the wafer with the unsmooth surface and bonding of other same materials are achieved. 本发明公开了一种基于原子团簇焊