Crystal growing furnace

The invention discloses a crystal growing furnace. The crystal growing furnace is used for producing crystal bars. The crystal growing furnace comprises a furnace body, a lifting shaft and a clamping device, at least part of the lifting shaft is located in the furnace body, the lifting shaft has the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	GAO YU, ZHU LIANG, FENG XIANJIAN, XU XIN, CAO JIANWEI, NI JUNFU, RUAN WENXING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention discloses a crystal growing furnace. The crystal growing furnace is used for producing crystal bars. The crystal growing furnace comprises a furnace body, a lifting shaft and a clamping device, at least part of the lifting shaft is located in the furnace body, the lifting shaft has the rotation freedom degree around the axis of the lifting shaft and the movement freedom degree in the axial direction of the lifting shaft, and the lifting shaft is used for lifting a crystal bar; the clamping device is at least partially located in the furnace body and at least partially arranged around the lifting shaft. The clamping device comprises a device body, a pushing piece and a clamping assembly, and the lifting shaft is sleeved with the device body; the pushing piece penetrates through the device body and has a moving freedom degree; the clamping assembly is located on the device body and has the rotational freedom degree, and the clamping assembly abuts against the pushing piece so that the clamping ass