Preparation method of high-plasticity cadmium telluride film with ultra-nano twin crystal and isometric crystal structure
The invention discloses a preparation method of a high-plasticity cadmium telluride film with an ultra-nano twin crystal and isometric crystal structure. The cadmium telluride thin film is deposited through magnetron sputtering, and the cadmium telluride thin film with an ultra-nano twin crystal and...
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| creator | WU LUOQI QIU LINFENG FENG XIAOBIN LI GUODONG DUAN BO |
| description | The invention discloses a preparation method of a high-plasticity cadmium telluride film with an ultra-nano twin crystal and isometric crystal structure. The cadmium telluride thin film is deposited through magnetron sputtering, and the cadmium telluride thin film with an ultra-nano twin crystal and isometric crystal structure is prepared at a certain working temperature through working air pressure regulation and an intermittent sputtering method. Wherein the related working air pressure range is 1.5 Pa-3. 0 Pa, the working temperature range is 25 DEG C-75 DEG C, the intermittent sputtering method takes 20 min-30 min sputtering and 15 min-30 min sputtering stopping as a cycle, and a plurality of cycles are repeated, so that the total sputtering time is 3 h-5 h. The average grain size of isometric crystals of the cadmium telluride thin film prepared by the method is 5-10nm, the average thickness of twin lamellae is 1.2-2.0 nm, and the isometric crystals and the twin lamellae are in ultra-nano (llt; and under |
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The cadmium telluride thin film is deposited through magnetron sputtering, and the cadmium telluride thin film with an ultra-nano twin crystal and isometric crystal structure is prepared at a certain working temperature through working air pressure regulation and an intermittent sputtering method. Wherein the related working air pressure range is 1.5 Pa-3. 0 Pa, the working temperature range is 25 DEG C-75 DEG C, the intermittent sputtering method takes 20 min-30 min sputtering and 15 min-30 min sputtering stopping as a cycle, and a plurality of cycles are repeated, so that the total sputtering time is 3 h-5 h. The average grain size of isometric crystals of the cadmium telluride thin film prepared by the method is 5-10nm, the average thickness of twin lamellae is 1.2-2.0 nm, and the isometric crystals and the twin lamellae are in ultra-nano (llt; and under</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240419&DB=EPODOC&CC=CN&NR=117904579A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240419&DB=EPODOC&CC=CN&NR=117904579A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WU LUOQI</creatorcontrib><creatorcontrib>QIU LINFENG</creatorcontrib><creatorcontrib>FENG XIAOBIN</creatorcontrib><creatorcontrib>LI GUODONG</creatorcontrib><creatorcontrib>DUAN BO</creatorcontrib><title>Preparation method of high-plasticity cadmium telluride film with ultra-nano twin crystal and isometric crystal structure</title><description>The invention discloses a preparation method of a high-plasticity cadmium telluride film with an ultra-nano twin crystal and isometric crystal structure. The cadmium telluride thin film is deposited through magnetron sputtering, and the cadmium telluride thin film with an ultra-nano twin crystal and isometric crystal structure is prepared at a certain working temperature through working air pressure regulation and an intermittent sputtering method. Wherein the related working air pressure range is 1.5 Pa-3. 0 Pa, the working temperature range is 25 DEG C-75 DEG C, the intermittent sputtering method takes 20 min-30 min sputtering and 15 min-30 min sputtering stopping as a cycle, and a plurality of cycles are repeated, so that the total sputtering time is 3 h-5 h. The average grain size of isometric crystals of the cadmium telluride thin film prepared by the method is 5-10nm, the average thickness of twin lamellae is 1.2-2.0 nm, and the isometric crystals and the twin lamellae are in ultra-nano (llt; and under</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLsKwkAQANNYiPoP6wcEDCqSUoJiJRb2YblsvIV7sbdHyN9rIdZWA8Mwy2p-CCUUVI4BPKmNA8QRLL9snRxmZcM6g8HBc_Gg5FwRHghGdh4mVgvFqWAdMETQiQMYmbOiAwwDcI6fqbD52axSjBahdbUY0WXafLmqttfLs7vVlGJPOaGhQNp396Y5tbvD8dSe9_80b6esR-w</recordid><startdate>20240419</startdate><enddate>20240419</enddate><creator>WU LUOQI</creator><creator>QIU LINFENG</creator><creator>FENG XIAOBIN</creator><creator>LI GUODONG</creator><creator>DUAN BO</creator><scope>EVB</scope></search><sort><creationdate>20240419</creationdate><title>Preparation method of high-plasticity cadmium telluride film with ultra-nano twin crystal and isometric crystal structure</title><author>WU LUOQI ; QIU LINFENG ; FENG XIAOBIN ; LI GUODONG ; DUAN BO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN117904579A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>WU LUOQI</creatorcontrib><creatorcontrib>QIU LINFENG</creatorcontrib><creatorcontrib>FENG XIAOBIN</creatorcontrib><creatorcontrib>LI GUODONG</creatorcontrib><creatorcontrib>DUAN BO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WU LUOQI</au><au>QIU LINFENG</au><au>FENG XIAOBIN</au><au>LI GUODONG</au><au>DUAN BO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Preparation method of high-plasticity cadmium telluride film with ultra-nano twin crystal and isometric crystal structure</title><date>2024-04-19</date><risdate>2024</risdate><abstract>The invention discloses a preparation method of a high-plasticity cadmium telluride film with an ultra-nano twin crystal and isometric crystal structure. The cadmium telluride thin film is deposited through magnetron sputtering, and the cadmium telluride thin film with an ultra-nano twin crystal and isometric crystal structure is prepared at a certain working temperature through working air pressure regulation and an intermittent sputtering method. Wherein the related working air pressure range is 1.5 Pa-3. 0 Pa, the working temperature range is 25 DEG C-75 DEG C, the intermittent sputtering method takes 20 min-30 min sputtering and 15 min-30 min sputtering stopping as a cycle, and a plurality of cycles are repeated, so that the total sputtering time is 3 h-5 h. The average grain size of isometric crystals of the cadmium telluride thin film prepared by the method is 5-10nm, the average thickness of twin lamellae is 1.2-2.0 nm, and the isometric crystals and the twin lamellae are in ultra-nano (llt; and under</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Preparation method of high-plasticity cadmium telluride film with ultra-nano twin crystal and isometric crystal structure |
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