Preparation method of high-plasticity cadmium telluride film with ultra-nano twin crystal and isometric crystal structure

The invention discloses a preparation method of a high-plasticity cadmium telluride film with an ultra-nano twin crystal and isometric crystal structure. The cadmium telluride thin film is deposited through magnetron sputtering, and the cadmium telluride thin film with an ultra-nano twin crystal and isometric crystal structure is prepared at a certain working temperature through working air pressure regulation and an intermittent sputtering method. Wherein the related working air pressure range is 1.5 Pa-3. 0 Pa, the working temperature range is 25 DEG C-75 DEG C, the intermittent sputtering method takes 20 min-30 min sputtering and 15 min-30 min sputtering stopping as a cycle, and a plurality of cycles are repeated, so that the total sputtering time is 3 h-5 h. The average grain size of isometric crystals of the cadmium telluride thin film prepared by the method is 5-10nm, the average thickness of twin lamellae is 1.2-2.0 nm, and the isometric crystals and the twin lamellae are in ultra-nano (llt; and under