Method for adjusting hole concentration of CIGS (Copper Indium Gallium Selenide) film or solar cell by utilizing multi-target sputtering

The invention discloses a method for adjusting the hole concentration of a CIGS thin film or a solar cell through multi-target sputtering, and belongs to the technical field of thin film solar cells. According to the method, argon is ionized to generate high-energy Ar plasma, the high-energy Ar plasma bombards the CIGS target material, the CIGS film is prepared on the substrate prepared in advance, and controllable adjustment of the hole concentration in the CIGS is achieved by adjusting the content of copper in the CIGS target material. Compared with the prior art, the CIGS thin film prepared by adopting the magnetron sputtering method is uniform in component and smooth in surface, and the whole hole concentration of the absorption layer is adjusted due to different copper contents in the used target material, so that the open-circuit voltage and the filling factor of the CIGS battery are further improved, the performance parameters of the battery are effectively improved, and the photoelectric conversion ef