WAT test structure
The WAT test structure provided by the invention comprises a first triode and a second triode, a base region of the first triode comprises a first base region and a second base region, the first base region is formed in the test layer, the second base region is formed in the connecting layer, the se...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The WAT test structure provided by the invention comprises a first triode and a second triode, a base region of the first triode comprises a first base region and a second base region, the first base region is formed in the test layer, the second base region is formed in the connecting layer, the section, perpendicular to the thickness direction of the semiconductor material layer, of the second base region is annular, and the bottom surface of the second base region is connected with the top surface of the first base region; a collector region and an emitter region of the first triode are respectively positioned on the inner periphery and the outer periphery of the second base region; a base region of the second triode comprises a third base region and a fourth base region, the third base region and the fourth base region are both formed in the connecting layer, the bottom face of the fourth base region is connected with the top face of the third base region, and the section, perpendicular to the thickness d |
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