Multi-stage IGBT (Insulated Gate Bipolar Translator) driving circuit and driving method for optimizing switch overshoot and loss

The invention belongs to the technical field of power electronics, and discloses a multi-stage IGBT (Insulated Gate Bipolar Translator) driving circuit for optimizing switch overshoot and loss, which comprises a dV/dt comparison module, a dI/dt comparison module and a controller, wherein the dV/dt comparison module is used for identifying whether an IGBT switching stage is a turn-off voltage rise stage or not; the dI/dt comparison module is used for identifying whether the IGBT switching stage is a turn-on current rising stage or a turn-off current falling stage; and the controller is used for adjusting the duty ratio of the IGBT gate driving signal according to the switching stage of the IGBT and the load current so as to adjust the switching-on speed or the switching-off speed of the IGBT, and adjusting the comparison threshold value of the dV/dt comparison module or the dI/dt comparison module so as to adjust the control duration of the IGBT gate driving signal. According to the invention, IGBT multi-stage