Method for removing antireflection film of gallium arsenide solar cell
The invention discloses a method for removing an antireflection film of a gallium arsenide solar cell. The method comprises the following steps: feeding: taking a wafer out of a bearing tool and placing the wafer on a workbench; wafer positioning: accurately positioning the wafer according to the ma...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a method for removing an antireflection film of a gallium arsenide solar cell. The method comprises the following steps: feeding: taking a wafer out of a bearing tool and placing the wafer on a workbench; wafer positioning: accurately positioning the wafer according to the mark on the wafer; laser film removal: carrying out a laser process at a set position to remove the antireflection film; optical detection: adopting optical automatic detection to detect the film removing effect; and blanking: taking the wafer out of the workbench. According to the invention, laser is used as an energy source, and a specific area is scanned through laser focusing, so that the local temperature of a sample is increased, and substances are sublimated to remove the substances at a specific position. In the process, the functions can be realized only by a one-step dry process, and the production efficiency is high.
本发明公开了一种砷化镓太阳电池减反射膜的去除方法,包括上料:将晶圆从承载工装中取出放在工作台上;晶圆定位:根据晶圆上标记进行晶圆的精确定位;激光去膜:在设定位置进行激光工艺,去除减 |
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