Image sensor

An image sensor is disclosed. The image sensor includes: a substrate; at least one transfer gate on a top surface of the substrate; a floating diffusion region in the substrate and disposed apart from the at least one transfer gate in a first direction, the first direction being parallel to a top surface of the substrate; an intrinsic semiconductor region in the substrate and disposed between the at least one transfer gate and the floating diffusion region in the first direction; and a photoelectric conversion region in the substrate and disposed separately from the floating diffusion region in a second direction, where the second direction is perpendicular to the first direction, where the intrinsic semiconductor region is an undoped region. 公开了一种图像传感器。所述图像传感器包括：基底；至少一个传输门，在基底的顶表面上；浮动扩散区域，位于基底中并且在第一方向上与所述至少一个传输门分开设置，第一方向平行于基底的顶表面；本征半导体区域，位于基底中并且在第一方向上设置在所述至少一个传输门与浮动扩散区域之间；以及光电转换区域，位于基底中并且在第二方向上与浮动扩散区域分开设置，其中，第二方向垂直于第一方向，其中，本征半导体区域是未掺杂区域。