Indium column preparation method for reducing blind pixel rate of infrared detector

The invention provides an indium column preparation method for reducing the blind pixel rate of an infrared detector, and belongs to the technical field of infrared detector preparation. The problem of blind pixels caused by the defects of low indium column growth height, poor uniformity, small top layer width and the like after indium column growth is completed is solved; comprising the following steps: integrally scanning the heights and the shapes of indium columns on the surface of a chip on which an indium column array is grown, and recording the coordinate positions, the heights and the shapes of all the indium columns on the chip; performing spin coating and photoetching on the surface of the chip by using a spin coating machine, so that an invalid pixel region of the indium column is not covered by the photoresist, and an effective pixel region is covered and protected by the photoresist; growing an indium layer with a certain height on the front surface of the chip after the photoetching process is c