Waveguide type near-ballistic uni-traveling carrier photoelectric detector and preparation method thereof

The invention discloses a waveguide-type near-ballistic uni-traveling carrier photoelectric detector, which sequentially comprises a P-type contact layer, a barrier layer, an absorption layer, a depletion absorption layer, a first transition layer, a second transition layer, a cliff layer, a collection layer, a third transition layer, an electric field bearing layer, an N-type contact layer, a dilution waveguide layer and a substrate from top to bottom, the collection layer is made of an InGaAsP Q1.3 material, and the electric field bearing layer is made of an InP material. According to the invention, the bandwidth performance of the waveguide type high-speed NBUTC-PD in work is improved, and the conduction band of the collection layer is further smoothed. 本发明公开了一种波导型近弹道单行载流子光电探测器，由上至下依次为P型接触层、阻挡层、吸收层、耗尽吸收层、第一过渡层、第二过渡层、崖层、收集层、第三过渡层、电场承受层、N型接触层、稀释波导层、衬底，所述衬底的材料采用InP材料，所述收集层的材料采用InGaAsP Q1.3材料，所述电场承受层的材料采用InP材料。本发明提高了波导型高速NBUTC-PD工作中的带宽性能，并进一步平滑收集层的导带。