Method and system for analyzing loss and junction temperature of IGBT (Insulated Gate Bipolar Translator)

The invention discloses a method and system for analyzing IGBT loss and junction temperature, and relates to the technical field of power semiconductor devices, and the method comprises the steps: collecting IGBT characteristic data and diode characteristic data in a device comprising an IGBT and a diode, constructing a data manual, extracting characteristic curve parameters of the IGBT and the diode from the data manual, and carrying out the fitting; calculating the total loss of the device based on a characteristic curve parameter fitting result; and carrying out equivalence on the thermal network of the device, constructing an IGBT and diode equivalent thermal network model, and analyzing the highest junction temperature of the device according to the thermal network model. According to the method disclosed by the invention, by extracting the characteristic curve parameters of the IGBT and the diode, the accuracy of estimating the loss junction temperature of the device is improved; on-off loss and on-off