VCSEL laser and manufacturing method thereof

The invention discloses a VCSEL laser and a manufacturing method thereof. The VCSEL laser comprises an epitaxial structure, a first electrode and a second electrode. The first electrode and the second electrode are connected to the epitaxial structure. The epitaxial structure comprises a substrate layer, an ion implantation barrier layer and an epitaxial main body structure. The ion implantation barrier layer is formed between the substrate layer and the epitaxial main body structure to prevent current from flowing to the substrate layer from the epitaxial main body structure, the epitaxial main body structure is stacked on the ion implantation barrier layer, and the epitaxial main body structure comprises a bottom DBR layer, a top DBR layer, an active region and a limiting layer, the active region and the confinement layer are located between the bottom DBR layer and the top DBR layer. 公开了一种VCSEL激光器及其制造方法。所述VCSEL激光器包括：外延结构、第一电极和第二电极。所述第一电极和所述第二电极连接于所述外延结构。所述外延结构包括：衬底层、离子注入阻挡层和外延主体结构。所述离子注入阻挡层形成于所述衬底层和所述外延主体结