Light emitting diode and light emitting device

The invention discloses a light emitting diode and a light emitting device, an epitaxial layer in the light emitting diode comprises a first semiconductor layer, an active layer and a second semiconductor layer, and the radiation wavelength of the epitaxial layer is in a first wavelength range. The ohmic contact layer is arranged on the side, away from the active layer, of the first semiconductor layer and comprises a plurality of ohmic contact blocks arranged at intervals, and the maximum width of the bottom area, making contact with the first semiconductor layer, of each ohmic contact block is smaller than or equal to the maximum wavelength in the first wavelength range. The ohmic contact electrodes at least cover all the ohmic contact blocks and the first semiconductor layer between the adjacent ohmic contact blocks. The first bonding pad electrode is arranged on the ohmic contact electrode and is electrically connected with the first semiconductor layer. In the invention, when the light wave passes throug