Silicon carbide irradiation detector with embedded trapezoidal floating junction and trapezoidal semi-super junction

The invention provides a silicon carbide irradiation detector with an embedded trapezoidal floating junction and a trapezoidal semi-super junction, which is characterized in that under the condition that the working voltage of the detector is not changed, a layer of semi-super junction with trapezoidal cross section characteristics and different doping types is arranged in a sensitive region of a device; a plurality of layers of floating junctions with trapezoidal cross section characteristics and different doping types enable an electric field in a sensitive region body to be homogenized, the internal field intensity of the detector is improved, and the detection efficiency of the detector is improved. The built-in trapezoidal semi-super junction can effectively improve the depth of a sensitive region of the detector, so that the detection efficiency of the detector becomes high; the built-in trapezoidal floating junction and the trapezoidal semi-super junction can reduce the surface electric field peak valu