Patterning-independent two-dimensional semiconductor device based on graphene electrode constructed from bottom to top

The invention discloses a patterning-independent two-dimensional semiconductor device based on a graphene electrode constructed from bottom to top. The patterning-independent two-dimensional semiconductor device comprises a substrate, an electrode, a two-dimensional material nanosheet and a graphene nanosheet, the two electrodes are arranged on the substrate; the two-dimensional material nanosheet is located on the substrate, the position of the two-dimensional material nanosheet intersects with the connecting line position of the two electrodes, and the two-dimensional material nanosheet does not make contact with the electrodes; and the two graphene nanosheets are positioned on the substrate to connect the electrode with the two-dimensional material nanosheet. The contact resistance of the electronic device can be reduced by more than 80%, and the electronic device has the advantage that the electronic property of the two-dimensional material is not influenced, so that the electronic device can be widely po