Method for improving tail quality of N-type photovoltaic silicon single crystal rod

The invention provides a method for improving the tail quality of an N-type photovoltaic silicon single crystal rod, relates to the technical field of crystal rod drawing methods, and is characterized in that the content of factor impurities in a crystal rod drawing process is adjusted according to a predetermined relational expression of influence of different contents of factor impurities on the conversion efficiency improvement amplitude of a battery piece, so that the quality of the tail of the N-type photovoltaic silicon single crystal rod is improved. When the crystallization proportion of monocrystalline silicon is increased and the amount of silicon melt is continuously reduced, although the concentration of the impurities in the melt is increased due to the influence of the segregation effect, the increase rate of the concentration of the impurities is reduced due to the reduction of the initial concentration of the impurities; the absolute value of the impurity concentration at the tail of the cryst