Image sensor structure

The invention discloses an image sensor structure. The image sensor structure comprises a substrate, a pixel structure and a deep trench isolation structure, the substrate includes a first surface and a second surface opposite to each other. The pixel structure comprises a transfer transistor, a photosensitive element and a floating diffusion region. The transfer transistor includes a first gate. The first gate is disposed on a first side of the substrate. The photosensitive element is arranged in the substrate and located on one side of the first grid electrode. The floating diffusion region is arranged in the substrate and located on the other side of the first grid electrode. The deep trench isolation structure extends into the substrate from the second face of the substrate. The overlook pattern of the floating diffusion region does not overlap the overlook pattern of the deep trench isolation structure. 本发明公开一种影像传感器结构，包括基底、像素结构与深沟槽隔离结构。基底包括彼此相对的第一面与第二面。像素结构包括转移晶体管、感光元件与浮置扩散区。转移晶体管包括第一栅极。第一栅极设置在基底的第一面上。感光