Device aging model adopting reaction-diffusion mechanism and modeling method

The invention provides a device aging model adopting a reaction-diffusion mechanism and a modeling method. The model comprises a degradation stage model and a recovery stage model, the degradation stage model and the recovery stage model are respectively divided into a first period and a subsequent period, and the degradation stage model of the first period adopts a first time index to describe the change of threshold voltage; the recovery stage model of the first period adopts a second time index to describe the change of the threshold voltage; the degradation stage model and the recovery stage model of the subsequent period adopt a second time index to describe the change of the threshold voltage. According to the model, the degradation stage and the subsequent stage of the first period are treated separately, the device conditions of different periods can be fitted, and a good fitting result can be achieved under different voltage biases. 本发明提供一种采用反应-扩散机理的器件老化模型以及建模方法。所述模型包括退化阶段模型与恢复阶段模型，退化阶段模型和恢复阶段模型均分为第一