Resist stripper composition and pattern forming method using same

According to an embodiment of the present invention, a resist stripper composition and a pattern forming method using the same are provided. The resist stripper composition includes a basic compound including an ammonium hydroxide-based compound, ethanol, and a polar organic solvent including a sulf...

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Bibliographische Detailangaben
Hauptverfasser:	CHO HYEONG-JIN, KANG HAN-BYEOL, KIM SUNG-SIK, BANG, SOON-HONG, KIM JEONG-HYUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	According to an embodiment of the present invention, a resist stripper composition and a pattern forming method using the same are provided. The resist stripper composition includes a basic compound including an ammonium hydroxide-based compound, ethanol, and a polar organic solvent including a sulfoxide-based compound. The resist stripping liquid has an improved stripping rate and improved solubility of the resist. 根据本发明的实施方式，提供了一种抗蚀剂剥离液组合物和使用该组合物的图案形成方法。抗蚀剂剥离液组合物包括包含氢氧化铵基化合物的碱性化合物、乙醇，以及含有亚砜基化合物的极性有机溶剂。抗蚀剂剥离液具有提高的剥离速率和抗蚀剂溶解性。