Photoetching method for improving transmittance of irradiator

Systems, apparatuses, and methods for adjusting illumination slit uniformity in a lithographic apparatus are provided. An example method may include determining whether an exposure field for a wafer exposure operation is less than a maximum exposure field of a uniformity correction system. In response to determining that the exposure field is less than the maximum exposure field, the example method may include modifying illumination slit uniformity calibration data associated with the maximum exposure field to produce 1-modified illumination slit uniformity calibration data associated with the exposure field. Subsequently, the example method may include determining an optimal position of a finger assembly of the uniformity correction system based on the modified illumination slit uniformity calibration data. 提供了用于调整光刻设备中的照射狭缝均匀性的系统、设备和方法。示例方法可以包括确定用于晶片曝光操作的曝光场是否小于均匀性校正系统的最大曝光场。响应于确定所述曝光场小于所述最大曝光场，所述示例方法可以包括修改与所述最大曝光场相关联的照射狭缝均匀性校准数据，以产生与所述曝光场相关联的经1修改的照射狭缝均匀性校准数据。随后，所述示例方法可以包括基于经修改的照射狭缝均匀性校准数据来确定所述均匀性校正系统的指状物组件