Light emitting diode and light emitting device

The invention discloses a light-emitting diode and a light-emitting device, and the light-emitting diode comprises a semiconductor epitaxial laminated layer which is provided with a first surface and a second surface which are opposite to each other, and comprises a first type semiconductor layer, an active layer and a second type semiconductor layer which are sequentially stacked in the direction from the first surface to the second surface; the active layer comprises n periods of quantum well structures, the quantum well structure of each period comprises a well layer and a barrier layer which are deposited in sequence, and the band gap of the barrier layer is larger than that of the well layer; the device is characterized in that the band gap of the barrier layer is gradually increased from the first surface to the second surface of the semiconductor epitaxial laminated layer. The light absorption of the barrier layer in the quantum well structure can be reduced, the refraction coefficient of the barrier l