Multi-channel multi-electrode heterostructure field effect transistor

The invention provides a multi-channel multi-electrode heterostructure field effect transistor. The multi-channel multi-electrode heterostructure field effect transistor comprises a substrate, a nucleating layer, a buffer layer, a superlattice stack, a cap layer, a first transistor region and a second transistor region. The first superlattice stack layer forms a carrier transport of a two-dimensional electron gas to generate a first current channel group and the second superlattice stack layer forms a carrier transport of a two-dimensional hole gas to generate a second current channel group at a different depth. The first transistor region has a first depth and is in contact with the first superlattice stack layer. The second transistor region has a second depth and is in contact with the second superlattice stack layer. The first transistor region controls the first current channel group and the second current channel group, and the second transistor region controls the second current channel group. 本发明提供了一种