Manufacturing method of through-silicon-via adapter plate and through-silicon-via adapter plate

The invention relates to a method for manufacturing a through-silicon-via pinboard and the through-silicon-via pinboard, and the method comprises the steps: manufacturing a structure of a silicon-based capacitor and a through-silicon-via by employing a photoetching and/or etching technology, and enabling the design of the silicon-based capacitor to achieve a load effect with different depths through etching grooves and holes with different widths. According to the invention, the problem of low integration level of the TSV adapter plate in the prior art is solved. 本发明涉及一种硅穿孔转接板的制作方法及硅穿孔转接板，该方法包括：利用光刻和/或刻蚀技术制作硅基电容与硅穿孔的结构，其中硅基电容设计采用刻蚀不同宽度的沟槽与孔洞以形成不同深度的负载效应。本发明解决了现有技术中硅穿孔转接板集成度低的问题。