Offset correction in voltage-controlled magnetoresistive sensors

The invention relates to offset correction in voltage-controlled magnetoresistive sensors. In some implementations, a magnetic sensor may apply an electrical signal across a tunnel barrier layer of a tunnel magnetoresistive (TMR) sensing element. The electrical signal may have a first signal level during a first time period and a second signal level during a second time period. The second signal level may be different from the first signal level. The magnetic sensor may generate an offset-corrected sensor signal based on a sensor signal generated by applying an electrical signal across a tunnel barrier of the TMR sensing element. 本公开涉及压控磁阻传感器中的偏移校正。在一些实现方式中，磁性传感器可以跨隧道磁阻(TMR)感测元件的隧道障碍层施加电信号。电信号可以具有在第一时间段期间的第一信号电平和在第二时间段期间的第二信号电平。第二信号电平可以不同于第一信号电平。磁性传感器可以基于由跨TMR感测元件的隧道障碍层施加电信号而产生的传感器信号来生成经偏移校正的传感器信号。