Purification method of single-walled carbon nanotube
The invention discloses a purification method of a single-walled carbon nanotube. The purification method comprises the following steps: carrying out first medium-temperature oxidation on the single-walled carbon nanotube to be purified at 200-500 DEG C; wherein the interior of the single-walled car...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a purification method of a single-walled carbon nanotube. The purification method comprises the following steps: carrying out first medium-temperature oxidation on the single-walled carbon nanotube to be purified at 200-500 DEG C; wherein the interior of the single-walled carbon nanotube to be purified contains metal impurity particles coated with graphite; carrying out high-temperature reduction on a product obtained by oxidation at the temperature of 600-1200 DEG C; a product obtained through high-temperature reduction is oxidized again at the temperature of 200-500 DEG C, and then first acid leaching is conducted. The first medium-temperature oxidation provides a reaction raw material, namely a metal oxide, for high-temperature reduction, the metal oxide and the graphite wrapping layer are subjected to a reduction reaction to etch the graphite wrapping layer, so that impurity particles of the metal element wrapped by the metal oxide are exposed, and the metal element is further oxid |
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