Electrical signal oscillator and application thereof

The invention relates to an electrical signal oscillator. The electrical signal oscillator comprises a p-type layer, an i-type layer arranged on one surface of the p-type layer, and an n-type layer arranged on the surface, away from the p-type layer, of the i-type layer, the material of the p-type layer is selected from any one of p-type Si, Ge, GaAs and SiC, the material of the i-type layer is SiO2, and the material of the n-type layer is vertically grown MoS2; the thickness of the i-type layer is selected from 2 nm to 50 nm; the thickness of the n-type layer is selected from 10 nm to 200 nm; according to the electrical signal oscillator provided by the invention, the electrical signal can be formed without depending on the environment, energy does not need to be captured from the environment, and the application scene is not limited. 本公开是关于一种电学信号振荡器，该电学信号振荡器包括：p型层、设置于p型层的一个表面上的i型层、以及设置于i型层远离p型层的表面上的n型层；p型层的材料选自p型Si、Ge、GaAs、SiC中的任一者，i型层的材料为SiO2，n型层的材料为竖直生长的MoS2；i型层的厚度选自2nm～50nm；n型层的厚度选自10nm～200nm；本公开所提供的电学信号