Data writing method, memory storage device and memory control circuit unit

The invention provides a data writing method, a memory storage device and a memory control circuit unit. The method comprises the following steps: obtaining a write-in instruction; writing first data in written data into a target entity unit of a target word line in a plurality of word lines according to the writing instruction; after the first data is written in, when one or more blank entity units arranged behind the target entity unit exist in the target character line, one or more further target entity units located in one or more further target character lines respectively are selected; and writing second data following the first data in the written data into the selected one or more further target entity units, wherein the one or more further target word lines are arranged behind the target word line. 本发明提供一种数据写入方法、存储器存储装置及存储器控制电路单元。所述方法包括：获得写入指令；根据所述写入指令，将写入数据中的第一数据写入至多个字元线中的目标字元线的目标实体单元；以及在写入所述第一数据后，在所述目标字元线内具有排列在所述目标实体单元后的空白的一或多个实体单元时，选择分别位于一或多个又一目标字元线内的一或多个又一目标实体单元；以及将所述写入数据中接续在所述第一数据后的第二数据写入至所选择的所述